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| MBR2050CT thru MBR2060CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 A=Anode, C=Cathode, TAB=Cathode MBR2050CT MBR2060CT Symbol I(AV) IFSM dv/dt VRRM V 50 60 VRMS V 35 42 VDC V 50 60 Characteristics Maximum Average Forward Rectified Current @TC=125oC Maximum Ratings 20 150 10000 IF=10A IF=10A IF=20A IF=20A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.80 0.70 0.95 0.85 0.1 15 2.0 400 -55 to +150 -55 to +175 Unit A A V/us Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) VF V IR ROJC CJ TJ TSTG Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) mA o C/W pF o o Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any MBR2050CT thru MBR2060CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 20 PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 15 10 5 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 1000 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 100 10 TJ = 100 C 10 1.0 TJ = 75 C 1.0 0.1 TJ = 25 C TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.01 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 TJ = 25 C, f= 1MHz CAPACITANCE , (pF) 1000 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS |
Price & Availability of MBR2050CT
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